BAL99LT1
| Model | BAL99LT1 |
| Description | CASE 318-08, STYLE 18 SOT-23 (TO-236AB) |
| PDF file | Total 4 pages (File size: 74K) |
| Chip Manufacturer | MOTOROLA |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAL99LT1/D
Switching Diode
ANODE
3
CATHODE
2
BAL99LT1
MAXIMUM RATINGS
3
Rating
Continuous Reverse Voltage
Peak Forward Current
Symbol
VR
IF
Value
70
100
Unit
Vdc
mAdc
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
CASE 318 – 08, STYLE 18
SOT– 23 (TO – 236AB)
DEVICE MARKING
BAL99LT1 = JF
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IR = 100
µAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Recovery Current
(IF = 10 mAdc, VR = 5.0 Vdc, RL = 500
Ω)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100
Ω,
measured at IR = 1.0 mAdc)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4
0.3
IR
—
—
—
V(BR)
VF
—
—
—
—
QS
CD
trr
VFR
—
—
—
—
715
855
1000
1250
45
1.5
6.0
1.75
pC
pF
ns
Vdc
70
2.5
30
50
—
Vdc
mV
µAdc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
