CHA2066
| Model | CHA2066 |
| Description | 10-16GHz Low Noise Amplifier |
| PDF file | Total 8 pages (File size: 131K) |
| Chip Manufacturer | UMS |
CHA2066
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2066 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
A
B
C
D
E
NC
G1
7272
NC
G2
Vd
RFin
RFout
UMS
Main Features
Gain ( dB )
20
18
16
14
12
10
8
6
4
2
0
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Frequency ( GHz )
5
Noise Figure ( dB )
■
Broad band performance 10-16GHz
■
2.0dB noise figure, 10-16GHz
■
16dB gain,
±
0.5dB gain flatness
■
Low DC power consumption, 50mA
■
20dBm 3rd order intercept point
■
Chip size : 1,52 x 1,08 x 0.1mm
4
3
2
1
0
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
NF
G
∆G
Parameter
Noise figure, 10-16GHz
Gain
Gain flatness
14
Min
Typ
2.0
16
±
0.5
±
1.0
Max
2.5
Unit
dB
dB
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20661257 -14-Sept-01
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 CHA2066-99F/00
|
10-16GHz Low Noise Amplifier | UMS | Preview |
|
CHA2066RBF
|
10-16GHz Self biased Low Noise Amplifier | UMS | Preview |
|
CHA2066RBF/24
|
10-16GHz Self biased Low Noise Amplifier | UMS | Preview |
