G1127-02
| Model | G1127-02 |
| Description | GaAsP photodiode |
| PDF file | Total 4 pages (File size: 171K) |
| Chip Manufacturer | HAMAMATSU |
PHOTODIODE
GaAsP photodiode
G1126-02, G1127-02, G2119
Schottky type for UV to visible range
Features
Applications
l
Low dark current
l
High UV sensitivity
l
Analytical instruments
l
Color identification
l
UV detection
s
General ratings / Absolute maximum ratings
Type No.
G1126-02
G1127-02
G2119
Dimensional
outline/
Window
material
➀/Q
*
➁/Q
➂/Q
Package
TO-5
TO-8
Ceramic
Active area
size
(mm)
2.3 × 2.3
4.6 × 4.6
10.1 × 10.1
Effective
active
area
(mm
2
)
5.2
21
98
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(°C)
(°C)
5
-10 to +60
-20 to +70
s
Electrical and optical characteristics (Typ. Ta=25
°C, unless otherwise noted
)
Peak
Spectral
sensitivity
response
wave-
range
length
λ
λp
(nm) (nm)
Photo sensitivity
S
(A/W)
Hg GaP
line LED
254 nm 560 nm
Terminal
Temp.
Rise time
Dark
Short circuit
capacitance
coefficient
tr
current
current
Ct
of
V
R
=0 V
Isc
I
D
V
R
=0 V
I
D
Max.
R
L
=1 kΩ
He-Ne
100
lx
T
CID
f=10 kHz
laser
633 nm
Min. Typ.
V
4
=10 mV
V
R
=1 V
(pF)
(µA) (µA) (pA) (pA)
(times/°C)
(µs)
0.25 0.3
5
50
3.5
1800
0.17 0.9 1.2 10
100 1.07
12
7000
5
6
100 5000
55
25000
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
λp
G1126-02
G1127-02
190 to 680
610 0.18 0.035 0.17
G2119
* Window material Q: quartz glass
Min. Typ.
(GΩ) (GΩ) (W/Hz
1/2
)
2
15 5.8 × 10
-15
1
8 8.0 × 10
-15
0.1 0.7 2.4 × 10
-14
