J305-TA13-E3
| Model | J305-TA13-E3 |
| Description | Transistor |
| PDF file | Total 7 pages (File size: 96K) |
| Chip Manufacturer | VISHAY |
J304/305
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J304
J305
V
GS(off)
(V)
−2
to
−6
−0.5
to
−3
V
(BR)GSS
Min (V)
−30
−30
g
fs
Min (mS)
4.5
3
I
DSS
Min (mA)
5
1
FEATURES
D
Excellent High Frequency Gain: J304,
Gps 11 dB (typ) @ 400 MHz
D
Very Low Noise: 3.8 dB (typ) @
400 MHz
D
Very Low Distortion
D
High ac/dc Switch Off-Isolation
D
High Gain: A
V
= 60 @ 100
mA
BENEFITS
D
D
D
D
D
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
APPLICATIONS
D
D
D
D
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
TO-226AA
(TO-92)
S
1
D
2
G
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−30
V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55
to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .
−55
to 150_C
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
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