J309D70Z
| Model | J309D70Z |
| Description | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 |
| PDF file | Total 13 pages (File size: 562K) |
| Chip Manufacturer | FAIRCHILD |
J309 / J310 / MMBFJ309 / MMBFJ310
Discrete POWER & Signal
Technologies
J309
J310
MMBFJ309
MMBFJ310
G
D
G
S
TO-92
D
SOT-23
Mark: 6U / 6T
S
N-Channel RF Amplifier
This device is designed for VHF/UHF amplifier, oscillator and mixer
applications. As a common gate amplifier, 16 dB at 100 MHz and
12 dB at 450 MHz can be realized. Sourced from Process 92.
Absolute Maximum Ratings*
Symbol
V
DS
V
GS
I
GF
T
J
,T
stg
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
J309 / J310
350
2.8
125
357
Max
*MMBFJ309
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã
1997 Fairchild Semiconductor Corporation
