JANSG2N7268
| Model | JANSG2N7268 |
| Description | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| PDF file | Total 12 pages (File size: 444K) |
| Chip Manufacturer | IRF |
PD - 90675C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM7150
100K Rads (Si)
IRHM3150
300K Rads (Si)
IRHM4150
IRHM8150
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.065Ω
0.065Ω
0.065Ω
0.065Ω
REF: MIL-PRF-19500/603
®
RAD Hard HEXFET
TECHNOLOGY
IRHM7150
JANSR2N7268
100V, N-CHANNEL
I
D
34A
34A
34A
34A
QPL Part Number
JANSR2N7268
JANSF2N7268
JANSG2N7268
JANSH2N7268
TO-254AA
International Rectifiers RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
www.irf.com
1
8/14/01
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