J/SST112
| Model | J/SST112 |
| Description | N-Channel JFETs |
| PDF file | Total 6 pages (File size: 53K) |
| Chip Manufacturer | VISHAY |
J/SST111 Series
Vishay Siliconix
N-Channel JFETs
J111
J112
J113
PRODUCT SUMMARY
Part Number
J/SST111
J/SST112
J/SST113
SST111
SST112
SST113
V
GS(off)
(V)
–3 to –10
–1 to –5
v–3
r
DS(on)
Max (W)
30
50
100
I
D(off)
Typ (pA)
5
5
5
t
ON
Typ (ns)
4
4
4
FEATURES
D
D
D
D
D
Low On-Resistance: 111 < 30
W
Fast Switching—t
ON
: 4 ns
Low Leakage: 5 pA
Low Capacitance: 3 pF
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA (TO-92)
D
1
D
1
3
S
2
S
2
G
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-236 (SOT-23)
G
3
Top View
Top View
J111
J112
J113
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (
1
/
16
” from case for 10 seconds) . . . . . . . . . . . . . . 300
_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
Power Dissipation
a
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
7-1
