N16T1630C2BZ2
| Model | N16T1630C2BZ2 |
| Description | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| PDF file | Total 9 pages (File size: 239K) |
| Chip Manufacturer | ETC |
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
t
WC
Address
t
AW
CE1
t
CW
CE2
t
BW
LB, UB
t
AS
WE
t
DW
High-Z
Data In
t
WHZ
Data Out
t
WP
N16T1630C2B
t
WR
t
DH
Data Valid
t
OW
High-Z
Timing Waveform of Write Cycle (CE1 Control)
t
WC
Address
t
AW
CE1
(for CE2 Control, use
inverted signal)
LB, UB
t
WP
WE
t
DW
Data In
t
LZ
Data Out
t
WHZ
t
DH
t
CW
t
AS
t
BW
t
WR
Data Valid
High-Z
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 N16T1630C2BZ2-55
|
16Mb Ultra-Low Power Asynchronous CMOS SRAM | ETC | Preview |
|
N16T1630C2BZ2-70
|
16Mb Ultra-Low Power Asynchronous CMOS SRAM | ETC | Preview |
