P0111BN5XA4
| Model | P0111BN5XA4 |
| Description | SILICON CONTROLLED RECTIFIER,200V V(DRM),500MA I(T),SOT-223 |
| PDF file | Total 6 pages (File size: 61K) |
| Chip Manufacturer | STMICROELECTRONICS |
®
P01xxxN
SENSITIVE SCR
FEATURES
n
n
I
T(RMS)
= 0.8A
V
DRM
/ V
RRM
= 200V to 600V
A
DESCRIPTION
High performance planar technology. These parts
are intended for general purpose applications
where low gate sensitivity is required.
K
A
G
SOT223
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
*
I
T(AV)
*
I
TSM
Parameter
RMS on-state current (180° conduction angle)
Mean on-state current (180° conduction angle)
Non repetitive surge peak on-state current
(T
j
initial = 25°C )
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 10 mA
di
G
/dt = 0.1 A/µs.
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s
Ta= 70°C
Ta= 70°C
tp = 8.3 ms
tp = 10 ms
I
2
t
dI/dt
T
stg
T
j
Tl
tp = 10 ms
Value
0.8
0.5
8
7
0.24
30
- 40, + 150
- 40, + 125
260
A
2
s
A/µs
°C
°C
Unit
A
A
A
* : With 5cm2 copper (e=35µm) surface under tab.
Voltage
Symbol
V
DRM
V
RRM
Parameter
B
Repetitive peak off-state voltage
T
j
= 125°C R
GK
= 1K
200
D
400
M
600
V
Unit
March 2000 - Ed: 1A
1/6
