P0300SD
| Model | P0300SD |
| Description | solid state crowbar devices |
| PDF file | Total 212 pages (File size: 2M) |
| Chip Manufacturer | TECCOR |
SIDACtor Device Selection Criteria
SIDACtor
Device Selection Criteria
When selecting a
SIDACtor
device, the following criteria should be used:
Off-state Voltage (V
DRM
)
The V
DRM
of the
SIDACtor
device must be greater than the maximum operating voltage of
the circuit that the
SIDACtor
device is protecting.
Example 1:
For a POTS (Plain Old Telephone Service) application, convert the maximum operating
Ring voltage (150 V rms) to a peak voltage, and add the maximum DC bias of the central
office battery:
150 V
RMS
Ö2
+ 56.6 V
PK
= 268.8 V
PK
\
V
DRM
> 268.8 V
Example 2:
For an ISDN application, add the maximum voltage of the DC power supply to the
maximum voltage of the transmission signal (for U.S. applications, the U-interface will not
have a DC voltage, but European ISDN applications may):
150 V
PK
+ 3 V
PK
= 153 V
PK
\
V
DRM
> 153 V
Switching Voltage (V
S
)
The V
S
of the
SIDACtor
device should be equal to or less than the instantaneous peak
voltage rating of the component it is protecting.
Example 1:
V
S
£
V
Relay Breakdown
Example 2:
Peak Pulse Current (I
PP
)
For circuits that do not require additional series resistance, the surge current rating (I
PP
) of
the
SIDACtor
device should be greater than or equal to the surge currents associated with
the lightning immunity tests of the applicable regulatory requirement (I
PK
):
I
PP
³
I
PK
For circuits that use additional series resistance, the surge current rating (I
PP
) of the
SIDACtor
device should be greater than or equal to the available surge currents associated
with the lightning immunity tests of the applicable regulatory requirement (I
PK(available)
):
I
PP
³
I
PK(available)
© 2002 Teccor Electronics
SIDACtor
®
Data Book and Design Guide
5-5
http://www.teccor.com
+1 972-580-7777
Technical Notes
V
S
£
SLIC V
PK
