Q2004L31V
| Model | Q2004L31V |
| Description | Thyristor Product Catalog |
| PDF file | Total 224 pages (File size: 3M) |
| Chip Manufacturer | TECCOR |
Quadrac
Data Sheets
Part No.
I
T(RMS)
(5)
Isolated
Trigger Diac Specifications (T–MT1)
V
DRM
(1)
I
DRM
(1) (10)
V
TM
(1) (3)
∆V
BO
(7)
V
BO
(6)
[∆V± ]
(6)
I
BO
C
T
(11)
MT1
T
MT2
TO-220
See “Package Dimensions” section
for variations. (12)
Q2004LT
Volts
MIN
200
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
T
C
=
25 °C
mAmps
T
C
=
100 °C
MAX
Volts
T
C
=
125 °C
T
C
= 25 °C
MAX
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
Volts
MAX
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
Volts
MIN
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
MAX
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
Volts
MIN
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
µAmps
MAX
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
µFarads
MAX
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
4A
Q4004LT
Q6004LT
Q2006LT
Q4006LT
6A
Q6006LT
Q4006LTH
Q6006LTH
Q2008LT
Q4008LT
Q6008LT
Q4008LTH
Q6008LTH
Q2010LT
Q4010LT
8A
10 A
Q6010LT
Q4010LTH
Q6010LTH
Q2015LT
Q4015LT
Q6015LT
Q4015LTH
Q6015LTH
15 A
Specific Test Conditions
[∆V±]
— Dynamic breakback voltage (forward and reverse)
∆V
BO
— Breakover voltage symmetry
C
T
— Trigger firing capacitance
di/dt
— Maximum rate-of-change of on-state current
dv/dt
— Critical rate-of-rise of off-state voltage at rated V
DRM
gate open
dv/dt(c)
— Critical rate-of-rise of commutation voltage at rated V
DRM
and I
T(RMS)
commutating di/dt = 0.54 rated I
T(RMS)
/ms; gate
unenergized
2
t
— RMS surge (non-repetitive) on-state current for period of 8.3 ms
I
for fusing
I
BO
— Peak breakover current
I
DRM
— Peak off-state current gate open; V
DRM
= maximum rated value
I
GTM
— Peak gate trigger current (10
µ
s Max)
I
H
— Holding current; gate open
I
T(RMS)
— RMS on-state current, conduction angle of 360°
I
TSM
— Peak one-cycle surge
t
gt
— Gate controlled turn-on time
V
BO
— Breakover voltage (forward and reverse)
V
DRM
— Repetitive peak blocking voltage
V
TM
— Peak on-state voltage at maximum rated RMS current
General Notes
•
•
•
•
•
All measurements are made at 60 Hz with resistive load at an ambi-
ent temperature of +25
°C
unless otherwise specified.
Operating temperature range (T
J
) is -40
°C
to +125
°C.
Storage temperature range (T
S
) is -40
°C
to +125
°C.
Lead solder temperature is a maximum of +230
°C
for 10 seconds
maximum;
≥1/16"
(1.59 mm) from case.
The case temperature (T
C
) is measured as shown on dimensional
outline drawings. See “Package Dimensions” section of this
catalog.
Electrical Specification Notes
(1)
(2)
(3)
(4)
For either polarity of MT2 with reference to MT1
See Figure E3.1 for I
H
versus T
C
.
See Figure E3.4 and Figure E3.5 for i
T
versus v
T
.
See Figure E3.9 for surge ratings with specific durations.
http://www.teccor.com
+1 972-580-7777
E3 - 2
©2002 Teccor Electronics
Thyristor Product Catalog
