Q2004V31V
| Model | Q2004V31V |
| Description | Thyristor Product Catalog |
| PDF file | Total 224 pages (File size: 3M) |
| Chip Manufacturer | TECCOR |
Electrical Parameter Terminology
Thyristor
di/dt (Critical Rate-of-rise of On-state Current) –
Maximum
value of the rate-of-rise of on-state current which a thyristor can
withstand without deleterious effect
t
gt
(Gate-controlled Turn-on Time) –
Time interval between
the 10% rise of the gate pulse and the 90% rise of the principal
current pulse during switching of a thyristor from the off state to
the on state
dv/dt (Critical Rate-of-rise of Off-state Voltage or Static
dv/dt) –
Minimum value of the rate-of-rise of principal voltage
which will cause switching from the off state to the on state
dv/dt(c) Critical Rate-of-rise of Commutation Voltage of a
Triac (Commutating dv/dt) –
Minimum value of the rate-of-rise
of principal voltage which will cause switching from the off state
to the on state immediately following on-state current conduction
in the opposite quadrant
t
q
(Circuit-commutated Turn-off Time) –
Time interval
between the instant when the principal current has decreased to
zero after external switching of the principal voltage circuit and
the instant when the SCR is capable of supporting a specified
principal voltage without turning on
V
BO
(Breakover Voltage) –
Principal voltage at the breakover
point
V
DRM
(Repetitive Peak Off-state Voltage) –
Maximum allow-
I
2
t
(RMS Surge (Non-repetitive) On-state Fusing Current) –
Measure of let-through energy in terms of current and time for
fusing purposes
point
able instantaneous value of repetitive off-state voltage that may
be applied across a bidirectional thyristor (forward or reverse
direction) or SCR (forward direction only)
I
BO
(Breakover Current) –
Principal current at the breakover
I
DRM
(Repetitive Peak Off-state Current) –
Maximum leakage
I
GT
(Gate Trigger Current) –
Minimum gate current required to
switch a thyristor from the off state to the on state
maintain the thyristor in the on state
produce the gate trigger current
V
GT
(Gate Trigger Voltage) –
Minimum gate voltage required to
V
RRM
(Repetitive Peak Reverse Voltage) –
Maximum allow-
current that may occur under the conditions of V
DRM
able instantaneous value of a repetitive reverse voltage that may
be applied across an SCR without causing reverse current ava-
lanche
V
S
(Switching Voltage) –
Voltage point after V
BO
when a sidac
switches from a clamping state to on state
the on state
I
H
(Holding Current) –
Minimum principal current required to
I
PP
(Peak Pulse Current) –
Peak pulse current at a short time
duration and specified waveshape
I
RRM
(Repetitive Peak Reverse Current) –
Maximum leakage
current that may occur under the conditions of V
RRM
from the clamping state to on state
V
T
(On-state Voltage) –
Principal voltage when the thyristor is in
Diode Rectifiers
I
F(AV)
(Average Forward Current) –
Average forward conduc-
tion current
I
S
(Switching Current) –
Current at V
S
when a sidac switches
I
T(RMS)
(On-state Current) –
Anode cathode principal current
leakage current that may occur at rated V
RRM
rent
I
FM
(Maximum (Peak) Reverse Current) –
Maximum reverse
I
F(RMS)
(RMS Forward Current) –
RMS forward conduction cur-
I
FSM
(Maximum (Peak) Forward (Non-repetitive) Surge
Current) –
Maximum (peak) forward single cycle AC surge cur-
that may be allowed under stated conditions, usually the full-
cycle RMS current
cycle AC current pulse allowed
I
TSM
(Surge (Non-repetitive) On-state Current) –
Peak single
P
G(AV)
(Average Gate Power Dissipation) –
Value of gate
rent allowed for specified duration
power which may be dissipated between the gate and main ter-
minal 1 (or cathode) average over a full cycle
V
FM
(Maximum (Peak) Forward Voltage Drop) –
Maximum
P
GM
(Peak Gate Power Dissipation) –
Maximum power which
may be dissipated between the gate and main terminal 1 (or
cathode) for a specified time duration
R
θJA
(Thermal Resistance, Junction-to-ambient) –
Tempera-
ture difference between the thyristor junction and ambient divided
by the power dissipation causing the temperature difference
under conditions of thermal equilibrium
Note:
Ambient is defined as the point where temperature does
not change as a result of the dissipation.
(peak) forward voltage drop from the anode to cathode at stated
conditions
reverse blocking voltage that may be applied to the rectifier
V
R
(Reverse Blocking Voltage) –
Maximum allowable DC
V
RRM
(Maximum (Peak) Repetitive Reverse Voltage) –
Maxi-
mum peak allowable value of a repetitive reverse voltage that
may be applied to the rectifier
R
θJC
(Thermal Resistance, Junction-to-case) –
Temperature
difference between the thyristor junction and the thyristor case
divided by the power dissipation causing the temperature differ-
ence under conditions of thermal equilibrium
©2002 Teccor Electronics
Thyristor Product Catalog
E0 - 3
http://www.teccor.com
+1 972-580-7777
