R0990LS06C
| Model | R0990LS06C |
| Description | Silicon Controlled Rectifier, 2001A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, 101A336, 3 PIN |
| PDF file | Total 12 pages (File size: 254K) |
| Chip Manufacturer | IXYS |
WESTCODE
Positive development in power electronics
Characteristics
R0990LS06 to R0990LS08
PARAMETER
V
TM
V
0
r
S
dv/dt
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Turn-off time (note 2)
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
10
TYP. MAX. TEST CONDITIONS
(Note 1)
-
-
-
-
-
-
-
-
-
0.4
1.0
90
40
55
1.55
-
-
-
-
-
340
1.84
1.35
0.35
-
70
70
3.0
300
V
D
=80% V
DRM
, linear ramp
Rated V
DRM
Rated V
RRM
T
j
=25°C
V
D
=10V, I
T
=3A
I
TM
=1400A
UNITS
V
V
mΩ
V/µs
mA
mA
V
mA
mA
µs
µC
1000 T
j
=25°C
1.0
2.0
105
50
75
2.20
10
15
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, V
dr
=67%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, V
dr
=67%V
DRM
, dV
dr
/dt=200V/µs
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V
V
D
=67% V
DRM
, I
TM
=1500A, di/dt=60A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
µC
A
µs
µs
K/W
K/W
kN
g
R
th(j-hs)
F
W
t
Thermal resistance, junction to heatsink
Mounting force
Weight
-
-
10
-
0.032 Double side cooled
0.064 Single side cooled
20
-
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
2)
The required t
q
(specified with dV
dr
/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
for details of t
q
codes.
Data Sheet. Types R0990LS06x to R0990LS08x Issue 1
Page 2 of 12
April, 2001
