R0990LS06C
| Model | R0990LS06C |
| Description | Silicon Controlled Rectifier, 2001A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, 101A336, 3 PIN |
| PDF file | Total 12 pages (File size: 254K) |
| Chip Manufacturer | IXYS |
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
06
08
V
DRM
V
DSM
V
RRM
V
600
800
V
RSM
V
700
900
R0990LS06 to R0990LS08
V
D
V
R
DC V
420
560
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other t
q
/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(t
q
) and for the off-state voltage to reach full value (t
v
), i.e.
f
max
=
1
t
pulse
+
t
q
+
t
v
Data Sheet. Types R0990LS06x to R0990LS08x Issue 1
Page 3 of 12
April, 2001
