S0700KC17E
| Model | S0700KC17E |
| Description | Symmetrical GTO SCR, 870A I(T)RMS, 1700V V(DRM), 1275V V(RRM), 1 Element |
| PDF file | Total 15 pages (File size: 181K) |
| Chip Manufacturer | IXYS |
WESTCODE
An IXYS Company
Figure 8 – Typical turn-on energy per pulse
(including snubber discharge)
0.3
S0700KC17#
Issue 1
Symmetrical Gate Turn-Off Thyristor type S0700KC17#
Figure 9 – Maximum turn-on time
8
S0700KC17#
Issue 1
V
D
=0.5V
DRM
, I
T
=600A
V
D
=0.5V
DRM
I
GM
=12A, di
G
/dt=6A/µs
0.25
C
s
=1.5µF, R
s
=5Ω
T
j
=25
o
C
di/dt=500A/µs
I
GM
=8A
t
r
of I
GM
≤2µs
T
j
=25
o
C
di/dt=300A/µs
6
I
GM
=12A
Turn-on energy per pulse, E
ON
(J)
0.2
di/dt=100A/µs
Turn-on time, t
gt
(µs)
I
GM
=20A
0.15
4
0.1
2
0.05
0
0
300
600
Turn-on current, I
TM
(A)
900
1200
0
10
100
Rate of rise of on-state current, di/dt (A/µs)
1000
Figure 10 – Typical peak turn-off gate current
300
S0700KC17#
Issue 1
Figure 11 – Maximum gate turn-off charge
2
S0700KC17#
Issue 1
V
D
=0.8V
DRM
T
j
=125
o
C
250
di
GQ
/dt=30A/µs
1.5
di
GQ
/dt=40A/µs
V
D
=0.8V
DRM
T
j
=125 C
o
di
GQ
/dt=20A/µs
di
GQ
/dt=30A/µs
Peak turn-off gate current, I
GQ
(A)
di
GQ
/dt=20A/µs
200
Gate turn-off charge, Q
GQ
(mC)
di
GQ
/dt=40A/µs
1
150
0.5
100
Q
GQ
50
0
200
400
600
800
1000
Turn-off current, I
TGQ
(A)
0
0
200
400
600
800
1000
Turn-off current, I
TGQ
(A)
Data Sheet. Type S0700KC17# Issue 1
Page 12 of 15
July, 2004
