S0700KC17E
| Model | S0700KC17E |
| Description | Symmetrical GTO SCR, 870A I(T)RMS, 1700V V(DRM), 1275V V(RRM), 1 Element |
| PDF file | Total 15 pages (File size: 181K) |
| Chip Manufacturer | IXYS |
WESTCODE
An IXYS Company
Figure 12 – Maximum turn-off time
20
S0700KC17#
Issue 1
Symmetrical Gate Turn-Off Thyristor type S0700KC17#
Figure 13 – Turn-off energy per pulse
0.6
S0700KC17#
Issue 1
V
D
=0.8V
DRM
T
j
=125
o
V
D
=800V, V
DM
=1.28V
D
di
GQ
/dt=20A/µs, Ls≤0.3µH
di
GQ
/dt=15A/µs
T
j
=125
o
C
C
s
=0.5µF
Turn-off energy per pulse, E
off
(J)
di
GQ
/dt=20A/µs
C
s
=1µF C
s
=1.5µF C
s
=2µF
C
s
=3µF
15
0.4
V
DM
V
D
Turn-off time, t
gq
(µs)
10
di
GQ
/dt=30A/µs
di
GQ
/dt=40A/µs
For other values of V
D
scale E
off
2
0.2
1
0
200
800
1400
5
V
DM
0
0
200
400
600
Turn-off current, I
TGQ
(A)
800
1000
0
0
200
400
600
800
1000
Turn-off current, I
TGQ
(A)
Figure 14 – Typical turn-off energy per pulse
0.8
Figure 15 – Maximum permissible turn-off current
3
S0700KC17#
Issue 1
S0700KC17#
Issue 1
V
DM
=1200V, V
D
=0.5V
DRM
di
GQ
/dt=20A/µs, Ls≤0.3µH
T
j
=125
o
C
C
s
=1µF
C
s
=0.5µF
Turn-off energy per pulse, E
off
(J)
di
GQ
/dt=20A/µs
L
s
≤0.3µH
2.5
C
s
=1.5µF C
s
=2µF
T
j
=125
o
C
V
D
=0.8V
DRM
V
D
=0.65V
DRM
V
D
≤0.5V
DRM
0.6
V
D
Snubber capacitance, Cs (µF)
Note: V
DM
≤V
DRM
V
DM
C
s
=3µF
2
V
DM
≤1.2V
D
V
D
0.4
1.5
For other values of V
DM
scale E
off
1.5
1
1
0.2
0.5
600
1200
1800
V
DM
0.5
0
0
200
400
600
800
1000
Turn-off current, I
TGQ
(A)
0
0
200
400
600
800
1000
Turn-off current, ITGQ (Amperes)
Data Sheet. Type S0700KC17# Issue 1
Page 13 of 15
July, 2004
