U2090B
| Model | U2090B |
| Description | Monolithic Integrated Feature Phone Circuit |
| PDF file | Total 34 pages (File size: 675K) |
| Chip Manufacturer | ATMEL |
U4090B
Thermal Resistance
Junction ambient
Parameters
SSO44
Symbol
R
thJA
Value
70
Unit
K/W
Electrical Characteristics
f = 1 kHz, 0 dBm = 775 mV
rms
, I
M
= 0.3 mA, I
MP
= 2 mA, RDC = 130 k
W
, T
amb
= 25°C, RGSA = 560 k
W
,
Z
ear
= 68 nF + 100
W
, Z
M
= 68 nF, Pin 31 open, V
IMPSEL
= GND, V
MUTX
= GND, V
MUTR
= GND, unless otherwise
specified.
Parameters
DC characteristics
Test Conditions / Pin
Symbol
Min
Typ
2.4
5.0
7.5
9.4
Max
Unit
Figure
I
L
= 2 mA
I = 14 mA
DC voltage drop over circuit I
L
= 60 mA
L
I
L
= 100 mA
V
L
4.6
8.8
5.4
V
10.0
26
Transmission amplifier, I
L
= 14 mA, V
MIC
= 2 mV, RGT = 27 k
W
, unless otherwise specified
Adjustment range of trans-
G
T
40
45
50
dB
mit gain
RGT = 12 k
W
47
49
Transmitting amplification
48
dB
RGT = 27 k
W
39.8
41.8
G
T
I
L
14 mA,
Frequency response
D
G
T
0.5
dB
f = 300 to 3400 Hz
Pin 31 open
Gain change with current
D
G
T
0.5
dB
I
L
= 14 to 100 mA
T
amb
= – 10 to + 60
Gain deviation
D
G
T
0.5
dB
°C
CMRR of microphone
CMRR
60
80
dB
amplifier
Input resistance of MIC
RGT = 12 k
W
50
R
i
k
W
amplifier
RGT = 27 k
W
75
45
110
I
L
> 14 mA
Distortion at line
d
t
2
%
V
L
= 700 mVrms
I
L
> 19 mA
d < 5%
V
Lmax
1.8
3
4.2
dBm
Vmic = 25 mV
Maximum output voltage
CTXA = 1
m
F
28
28
28
28
28
28
28
28
w
"
"
"
28
Noise at line psophomet-
rically weighted
Anti-clipping attack time
release time
Gain at low operating cur-
rent
IMPSEL = open
RGT = 12 k
W
I
L
> 14 mA
G
T
= 48 dB
CTXA = 1
m
F
each 3 dB overdrive
I
L
= 10 mA
I
MP
= 1 mA
RDC = 68 k
W
Vmic = 1 mV
I
M
= 300
m
A
V
MICOmax
no
–5.2
– 80
0.5
9
–72
dBm
dBmp
ms
28
28
G
T
40
42.5
dB
28
TELEFUNKEN Semiconductors
Rev. C1, 28-Oct-96
15 (34)
Preliminary Information
