U2090B
| Model | U2090B |
| Description | Monolithic Integrated Feature Phone Circuit |
| PDF file | Total 34 pages (File size: 675K) |
| Chip Manufacturer | ATMEL |
U4090B
Test Conditions / Pin
RGT = 27 k
W
,
Input resistance
RGT = 15 k
W
I
15 mA
Distortion of DTMF signal
L
V
L
= 0 dBm
Gain deviation with current I
L
= 15 to 100 mA
AFS Acousting feedback suppression
Adjustment range of
I
L
15 mA
attenuation
I
L
15 mA,
I
INLDT
= 0
m
A
Attenuation of transmit
R
ATAFS
= 30 k
W
gain
I
INLDR
= 10
m
A
Parameters
Symbol
R
i
d
D
w
w
w
w
w
Min
60
26
Typ
180
70
Max
300
130
Unit
k
W
%
dB
Figure
29
29
29
D
GD
0
"
0.5
50
2
dB
31
D
G
T
D
G
SA
1.5
45
dB
31
Attenuation of speaker
amplifier
I
L
15 mA
I
INLDP
= 0
m
R
ATAFS
= 30 k
W
I
INLDR
= 10
m
50
dB
V
31
31
AFS disable
I
L
15 mA
V
ATAFS
Supply voltages, Vmic = 25 mV, T
amb
= – 10 to + 60°C
I
L
= 14 mA,
V
MP
V
MP
RDC = 68 k
W
I
MP
= 2 mA
I
L
= 100 mA
V
MPS
V
MPS
RDC = inf.,
I
MP
= 0 mA
I
L
14 mA,
V
M
V
M
I
M
= 700
m
A
RDC = 130 k
W
I
B
= + 20 mA,
V
B
V
B
I
L
= 0 mA
Ringing power converter, IMP = 1 mA, IM = 0
Maximum output power
V
RING
= 20.6 V
P
SA
RFDO: low to high
V
RINGON
Threshold of ring
V
HYST
frequency detector
= V
RING
ON -
RING
OFF VHYST
Input impedance
V
RING
= 30 V
R
RING
f = 300 Hz to 3400 Hz
Input impedance in speech
R
RINGSP
I
L
> 15 mA,
mode
3.1
3.3
3.5
V
26
6.7
V
26
w
1.3
7
3.3
7.6
V
V
26
26
20
17.5
11.0
5
mW
V
6
k
W
k
W
30
30
30
30
4
150
V
RING
= 20V + 1.5V
rms
Logic-level of frequency
detector
Ring detector enable
Zener diode voltage
V
RING
= 0 V
V
B
= 4 V
V
RING
= 25 V
V
RING
= 25 V,
RFDO high
I
RING
= 25 mA
0
V
RFDO
VMP
VMPON
V
RINGmax
V
1.8
30.8
2.0
2.2
33.3
V
V
30
30
30
18 (34)
Preliminary Information
TELEFUNKEN Semiconductors
Rev. C1, 28-Oct-96
