U20GL2C53A
| Model | U20GL2C53A |
| Description | TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type |
| PDF file | Total 4 pages (File size: 129K) |
| Chip Manufacturer | TOSHIBA |
U20GL2C53A
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
U20GL2C53A
Switching Mode Power Supply Application
Converter&Chopper Application
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Repetitive peak reverse voltage: V
RRM
= 400 V
Average output recified current: I
O
= 20 A
Ultra fast reverse-recovery time: t
rr
= 35 ns (max)
Low switching losses and output noise.
Power surface mount device for thin flat package.
“TFP” (TOSHIBA designation)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average output recified current
Peak one cycle surge forward current
(non-repetitive, sine wave)
Junction temperature
Storage temperature range
Symbol
V
RRM
I
O
I
FSM
T
j
T
stg
Rating
400
20
100 (50 Hz)
110 (60 Hz)
-40
to 150
-40
to 150
Unit
V
A
A
JEDEC
°C
°C
―
―
12-9B1A
JEITA
TOSHIBA
Weight: 0.74 g (typ.)
Polarity
③K
*①A1
②A2
*:
Common Terminal
1
2003-02-17
