W19B160BBB7M
| Model | W19B160BBB7M |
| Description | Flash, 1MX16, 7ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, GREEN, TFBGA-48 |
| PDF file | Total 47 pages (File size: 628K) |
| Chip Manufacturer | WINBOND |
W19B160BT/B DATA SHEET
1. GENERAL DESCRIPTION
The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M
×
8 or 1M
×
16 bits.
For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one
32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (× 16) data appears on DQ15-DQ0, and
byte-wide (× 8) data appears on DQ7−DQ0. The device can be programmed and erased in-system
with a standard 2.7~3.6V power supply. A 12-volt V
PP
is not required. The unique cell architecture of
the W19B160B results in fast program/erase operations with extremely low current consumption. The
device can also be programmed and erased by using standard EPROM programmers.
2. FEATURES
Performance
•
•
2.7~3.6-volt write (program and erase) operations
Fast write operation
−
Sector erase time: 0.7s (Typical)
−
Chip erases time: 25 s (Typical)
−
Byte/Word programming time: 5/7 µs (Typical)
•
•
•
•
Read access time: 70 ns
Typical program/erase cycles:
−
100K
Twenty-year data retention
Ultra low power consumption
−
Active current (Read): 9mA (Typical)
−
Active current (Program/erase): 20mA (Typical)
−
Standby current: 0.2
μA
(Typical)
Architecture
•
Sector erases architecture
−
One 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors
−
Top or bottom boot block configurations available
−
Supports full chip erase
•
•
•
•
JEDEC standard byte-wide and word-wide pin-outs TTL compatible I/O
Manufactured on WinStack-S 0.13µm process technology
Available packages: 48-pin TSOP
Compatible with common Flash Memory Interface (CFI) specification
Software Features
−
Flash device parameters stored directly on the device
−
Allows software driver to identify and use a variety of different current and future Flash products
•
End of program detection
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