J309-TR6-E3
| Model | J309-TR6-E3 |
| Description | Transistor |
| PDF file | Total 8 pages (File size: 115K) |
| Chip Manufacturer | VISHAY |
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
20
Output Characteristics
V
GS(off)
=
−1.5
V
V
GS
= 0 V
50
Output Characteristics
V
GS(off)
=
−3
V
V
GS
= 0 V
16
I
D
−
Drain Current (mA)
−0.2
V
I
D
−
Drain Current (mA)
40
−0.4
V
30
−0.8
V
−1.2
V
−1.6
V
10
−2.0
V
−2.4
V
0
2
4
6
8
10
12
−0.4
V
8
−0.6
V
−0.8
V
−1.0
V
20
4
0
0
2
4
6
8
10
V
DS
−
Drain-Source Voltage (V)
0
V
DS
−
Drain-Source Voltage (V)
30
Transfer Characteristics
V
GS(off)
=
−1.5
V
V
DS
= 10 V
100
Transfer Characteristics
V
GS(off
)
=
−3
V
V
DS
= 10 V
24
I
D
−
Drain Current (mA)
I
D
−
Drain Current (mA)
80
18
T
A
=
−55_C
25_C
60
T
A
=
−55_C
25_C
12
40
6
125_C
20
125_C
0
0
−0.4
−0.8
−1.2
−1.6
−2
V
GS
−
Gate-Source Voltage (V)
0
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS
−
Gate-Source Voltage (V)
30
g
fs
−
Forward Transconductance (mS)
Transconductance vs. Gate-Source Voltage
V
GS(off)
=
−1.5
V
V
DS
= 10 V
f = 1 kHz
50
Transconductance vs. Gate-Source Voltage
V
GS(off)
=
−3
V
V
DS
= 10 V
f = 1 kHz
24
g
fs
−
Forward Transconductance (mS)
T
A
=
−55_C
25_C
40
T
A
=
−55_C
18
125_C
12
30
25_C
20
6
10
125_C
0
0
−0.4
−0.8
−1.2
−1.6
−2
V
GS
−
Gate-Source Voltage (V)
0
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS
−
Gate-Source Voltage (V)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
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