J309-TR6-E3
Model | J309-TR6-E3 |
Description | Transistor |
PDF file | Total 8 pages (File size: 115K) |
Chip Manufacturer | VISHAY |
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10
Reverse Admittance vs. Frequency
T
A
= 25_C
V
DG
= 10 V
I
D
= 10 mA
Common−Gate
100
Output Admittance vs. Frequency
T
A
= 25_C
V
DG
= 10 V
I
D
= 10 mA
Common−Gate
1
(mS)
(mS)
−b
rg
+g
rg
0.1
−g
rg
10
b
og
1
g
og
0.01
100
200
500
1000
f
−
Frequency (MHz)
0.1
100
200
500
1000
f
−
Frequency (MHz)
20
Equivalent Input Noise Voltage vs. Frequency
V
DS
= 10 V
150
Output Conductance vs. Drain Current
V
GS(off)
=
−3
V
V
DS
= 10 V
f = 1 kHz
Hz
gos
−
Output Conductance (µS)
16
120
en
−
Noise Voltage nV /
12
I
D
= 1 mA
8
90
T
A
=
−55_C
60
25_C
30
4
I
D
= 10 mA
125_C
0
10
100
1k
f
−
Frequency (Hz)
10 k
100 k
0
0.1
1
I
D
−
Drain Current (mA)
10
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
7