N04L163WC1C
| Model | N04L163WC1C |
| Description | 4Mb Ultra-Low Power Asynchronous CMOS SRAM |
| PDF file | Total 10 pages (File size: 263K) |
| Chip Manufacturer | ETC |
N04L163WC1C
NanoAmp Solutions, Inc.
Data Retention Characteristics
Parameter
V
DR
I
CCDR
t
CDR
t
R
Description
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Vcc = 1.5V, CE
≥
Vcc - 0.2V,
VIN
≥
Vcc - 0.2V or VIN
≤
0.2V
-L
0
t
RC
Condition
Min
1.5
9
6
Typ
Max
Unit
V
µA
ns
ns
Advance Information
Data Retention Waveform
Data Retention Mode
Vcc
Vcc(min)
t
CDR
CE or
LB/UB
VDR
≥
1.5V
Vcc(min)
t
R
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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