N16T1630C2BZ2
| Model | N16T1630C2BZ2 |
| Description | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| PDF file | Total 9 pages (File size: 239K) |
| Chip Manufacturer | ETC |
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N16T1630C2B
16Mb Ultra-Low Power Asynchronous CMOS SRAM
1M x 16 bit
Overview
The N16T1630C2B is an integrated memory
device containing a low power 16 Mbit SRAM built
using a self-refresh DRAM array organized as
1,024,576 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N16T1630C2B is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard BGA packages
compatible with other standard 1Mb x 16 SRAMs.
Features
• Single Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
100µA at 3.0V (Max)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast access time
55ns address access option
35ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Green option for BGA package
Product Family
Part Number
N16T1630C2BZ
Package
Type
48 - BGA
Operating
Temperature
-40
o
C to +85
o
C
Power
Supply (Vcc)
2.7V - 3.6V
Speed
70ns
55ns
Standby
Operating
Current (I
SB
), Current (Icc),
Max
Max @ 3.0V
100
µA
3 mA @ 1MHz
N16T1630C2BZ2 Green 48 - BGA
Pin Configuration (Top View)
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
V
SS
V
CC
Pin Description
Pin Name
A
0
-A
19
WE
CE1, CE2
OE
LB
UB
I/O
0
-I/O
15
V
CC
V
SS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
2
OE
UB
I/O
10
I/O
11
I/O
12
3
A
0
A
3
A
5
A
17
NC
A
14
A
12
A
9
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
CE2
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
I/O
14
I/O
13
I/O
15
A
18
A
19
A
8
48 Ball BGA
6 x 8 mm
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 N16T1630C2BZ2-55
|
16Mb Ultra-Low Power Asynchronous CMOS SRAM | ETC | Preview |
|
N16T1630C2BZ2-70
|
16Mb Ultra-Low Power Asynchronous CMOS SRAM | ETC | Preview |
