K1S3216B5C-FI700
| Model | K1S3216B5C-FI700 |
| Description | Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 8 X 6 MM, 0.75 MM PITCH, FBGA-48 |
| PDF file | Total 10 pages (File size: 166K) |
| Chip Manufacturer | SAMSUNG |
K1S3216B5C
2M x 16 bit Uni-Transistor CMOS RAM
FEATURES
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Advanced
UtRAM
GENERAL DESCRIPTION
The K1S3216B5C is fabricated by SAMSUNG′s advanced
CMOS technology using one transistor memory cell. The device
supports industrial temperature range and 48 ball Chip Scale
Package for user flexibility of system design. The device also
supports DPD(Deep Power Down) mode.
Process Technology: CMOS
Organization: 2M x16 bit
Power Supply Voltage: 1.7V~2.1V
Three State Outputs
Compatible with Low Power SRAM
Deep Power Down: Memory cell data holds invalid
Package Type: 48-FBGA 6.0 x 8.0
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(t
RC
)
70/85ns
Power Dissipation
Standby
Deep power
Operating
(I
SB1
, Max.) down(I
SBD
, Max.) (I
CC2
, Max.)
80µA
10µA
30mA
PKG Type
K1S3216B5C-I
Industrial(-40~85°C)
1.7V~2.1V
48-FBGA 6.0 x 8.0
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A
LB
OE
A0
A1
A2
ZZ
Vcc
Vss
B
I/O9
UB
A3
A4
CS
I/O1
Row
Addresses
Row
select
Memory array
C
I/O10
I/O11
A5
A6
I/O2
I/O3
D
Vss
I/O12
A17
A7
I/O4
Vcc
I/O
1
~I/O
8
E
Vcc
I/O13
NC
A16
I/O5
Vss
I/O
9
~I/O
16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
G
I/O16
A19
A12
A13
WE
I/O8
Column Addresses
H
A18
A8
A9
A10
A11
A20
CS
ZZ
OE
WE
UB
LB
48-FBGA: Top View(Ball Down)
Control Logic
Name
CS
ZZ
OE
WE
A
0
~A
20
Function
Chip Select Input
Deep Power Down
Output Enable Input
Write Enable Input
Address Inputs
Name
Vcc
Vss
UB
LB
NC
Function
Power
Ground
Upper Byte(I/O
9
~
16
)
Lower Byte(I/O
1
~
8
)
Not Connected
1)
I/O
1
~I/O
16
Data Inputs/Outputs
1) Reserved for future use.
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
-2-
Revision 0.1
May 2003
