K1S3216B5C-FI700
| Model | K1S3216B5C-FI700 |
| Description | Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 8 X 6 MM, 0.75 MM PITCH, FBGA-48 |
| PDF file | Total 10 pages (File size: 166K) |
| Chip Manufacturer | SAMSUNG |
K1S3216B5C
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
K1S3216B5C-FI70
K1S3216B5C-FI85
Function
48-FBGA, 70ns, 1.8V/2.0V
48-FBGA, 85ns, 1.8V/2.0V
Advanced
UtRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. T
A
=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤20ns.
3. Undershoot: -1.0V in case of pulse width
≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
V
IH
V
IL
Min
1.7
0
1.4
-0.3
3)
Typ
1.8/2.0
0
-
-
Max
2.1
0
Vcc+0.3
2)
0.4
Unit
V
V
V
V
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
Test Conditions
V
IN
=Vss to Vcc
CS=V
IH,
ZZ=V
IH
, OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
Cycle time=1µs, 100% duty, I
IO
=0mA, CS≤0.2V,
ZZ≥Vcc-0.2V, V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Cycle time=Min, I
IO
=0mA, 100% duty, CS=V
IL
, ZZ=V
IH,
V
IN
=V
IL
or V
IH
I
OL
=0.1mA
I
OH
=-0.1mA
CS≥Vcc-0.2V, ZZ≥Vcc-0.2V, Other inputs=Vss to Vcc
ZZ≤0.2V, Other inputs=Vss to Vcc
Min
-1
-1
-
-
-
1.4
-
-
Typ
-
-
-
-
-
-
-
-
Max
1
1
5
30
0.2
-
80
10
Unit
µA
µA
mA
mA
V
V
µA
µA
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(CMOS)
Deep Power Down
V
OL
V
OH
I
SB1
1)
I
SBD
-5-
Revision 0.1
May 2003
