M11L416256SA-28T
| Model | M11L416256SA-28T |
| Description | EDO DRAM, 256KX16, 28ns, CMOS, PDSO40, TSOP2-44/40 |
| PDF file | Total 16 pages (File size: 231K) |
| Chip Manufacturer | ESMT |
(OLWH07
t
RASC
RAS
V
IH
V
IL
M11L416256A/M11L416256SA
EDO-PAGE-MODE READ-EARLY-WRITE CYCLE
(Psuedo READ-MODIFY-WRITE)
t
RP
t
CS H
t
CR P
CA SL ,C A SH
V
IH
V
IL
t
RC D
t
PC
t
C AS
t
CP
t
CP
t
CAS
t
CP
t
R SH
t
CAS
t
CP
t
AR
t
R AD
t
AS R
t
RAH
ADDR
V
IH
V
IL
R OW
t
RAL
t
CAH
t
AS C
t
CAH
t
ASC
t
CAH
ROW
t
ASC
CO LU MN( A)
COLU MN(B )
CO LU M N (N )
t
RCS
WE
V
IH
V
IL
t
RC H
t
WCS
t
W CH
t
AA
t
RAC
t
CAC
t
ACP
t
AA
t
W HZ
t
CAC
t
CO H
VA L ID DA TA( A)
VALID
DA TA( B )
t
DS
t
DH
I/ O
V
I / O H
V
I / O L
OPE N
VA LI D
D AT A I N
t
O AC
OE
V
IH
V
IL
RAS ONLY REFRESH CYCLE
(ADDR = A0~A8 ; OE , WE = DON’T CARE)
t
RC
t
RAS
RAS
V
IH
V
IL
t
RP
t
C RP
CA SL , C AS H
V
IH
V
IL
t
R PC
t
ASR
AD DR
V
IH
V
IL
R OW
t
RAH
ROW
I/ O
V
O H
V
O L
OPE N
DON'T CARE
UNDEFINED
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision
:
1.3
11/16
