M11L416256SA-28T
| Model | M11L416256SA-28T |
| Description | EDO DRAM, 256KX16, 28ns, CMOS, PDSO40, TSOP2-44/40 |
| PDF file | Total 16 pages (File size: 231K) |
| Chip Manufacturer | ESMT |
(OLWH07
t
RP
RAS
V
IH
V
IL
M11L416256A/M11L416256SA
CBR REFRESH CYCLE
(A0~A8 ; OE = DON’T CARE)
t
RAS
t
RP
t
RAS
t
RPC
t
CP
CA SL ,C A SH
V
IH
V
IL
t
CSR
t
CH R
t
R PC
t
CSR
t
CHR
I/ O
OPE N
t
RC H
WE
V
IH
V
IL
HIDDEN REFRESH CYCLE
( WE = HIGH ; OE = LOW)
(RE AD)
(REF RESH)
t
RAS
RA S
V
IH
V
IL
t
RP
t
RAS
t
CRP
V
IH
V
IL
t
RCD
t
RSH
t
CHR
CA SL ,C A SH
t
AR
t
RAD
t
ASR
t
RAH
ROW
t
ASC
t
R AL
t
C AH
ADDR
V
IH
V
IL
COLUMN
t
AA
t
RAC
t
CAC
t
CLZ
I/ O
V
O H
V
O L
OPEN
VAL ID DAT A
OP EN
NO TE 1
t
OF F1
t
O AC
t
O RD
OE
V
IH
V
IL
t
OF F2
DON 'T CA RE
UNDE FINED
Note : 1. t
OFF1
is reference from the rising edge of RAS or
CAS
, whichever occurs last.
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision
:
1.3
12/16
