M11L416256SA-28T
| Model | M11L416256SA-28T |
| Description | EDO DRAM, 256KX16, 28ns, CMOS, PDSO40, TSOP2-44/40 |
| PDF file | Total 16 pages (File size: 231K) |
| Chip Manufacturer | ESMT |
(OLWH07
READ CYCLE
t
R C
t
R AS
V
IH
RA S
V
IL
M11L416256A/M11L416256SA
t
RP
t
CSH
t
CRP
CA SL ,C AS H
V
IH
V
IL
t
RCD
t
RS H
t
CAS
t
RR H
t
C LC H
t
AR
t
ASR
AD DR
V
IH
V
IL
ROW
t
R AD
t
R AH
t
ASC
t
RAL
t
CAH
C OLUMN
R OW
t
R CS
WE
V
IH
V
IL
t
RC H
t
AA
t
R AC
t
C AC
t
CLZ
I/ O
V
O H
V
O L
OPE N
NO TE1
t
OFF 1
VAL ID DA TA
OP EN
t
O AC
OE
V
IH
V
IL
t
O FF 2
EARLY WRITE CYCLE
t
R C
t
RAS
RAS
V
IH
V
IL
t
RP
t
CRP
CA SL ,C AS H
V
IH
V
IL
t
RC D
t
CSH
t
RS H
t
CAS
t
CLC H
t
AR
t
ASR
ADDR
V
IH
V
IL
ROW
t
R AD
t
R AH
t
ASC
COLUMN
t
RAL
t
CAH
ROW
t
WCS
t
CWL
t
RWL
t
WCR
t
WCH
t
WP
WE
V
IH
V
IL
t
DS
I/O
V
IH
V
IL
V
IH
V
IL
t
DHR
t
DH
VA LI D DAT A
OE
DON'T CARE
UNDEFINED
Note: 1. t
OFF1
is referenced from the rising edge of
RAS
or
CAS
, whichever occurs last.
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision
:
1.3
8/16
