K1S1616B5M-EE70T
| Model | K1S1616B5M-EE70T |
| Description | DRAM |
| PDF file | Total 12 pages (File size: 217K) |
| Chip Manufacturer | SAMSUNG |
Advance
K1S1616B5M
POWER UP SEQUENCE
1. Apply power.
2. Maintain stable power(Vcc min.=1.7V) for a minimum 200µs with CS=high.
3. Issue read operation at least twice.
UtRAM
FUNCTIONAL DESCRIPTION
CS
H
X
1)
L
L
L
L
L
L
L
L
L
ZZ
H
L
H
H
H
H
H
H
H
H
H
OE
X
1)
X
1)
X
1)
H
H
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
X
1)
X
1)
H
H
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
X
1)
L
H
L
L
H
L
UB
X
1)
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Deep Power Down
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care.(Must be low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to V
CC
+0.3V
-0.2 to 2.5V
1.0
-65 to 150
-25 to 85
Unit
V
V
W
°C
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
STANDBY MODE STATE MACHINES
CS=V
IH
Power On
Initial State
(Wait 200µs)
CS=V
IL
, UB or/and LB=V
IL
ZZ=V
IH
CS=V
IH
ZZ=V
IH
ZZ=V
IL
Deep Power
Down Mode
CS=V
IH
, ZZ=V
IH
Standby
Mode
Active
ZZ=V
IL
Read Operation Twice
STANDBY MODE CHARACTERISTIC
Power Mode
Standby
Deep Power Down
Memory Cell Data
Valid
Invaild
Standby Current(µA)
µ
60
10
Wait Time(µs)
µ
0
200
-3-
Revision 0.0
May 2002
