K1S1616B5M-EE70T
| Model | K1S1616B5M-EE70T |
| Description | DRAM |
| PDF file | Total 12 pages (File size: 217K) |
| Chip Manufacturer | SAMSUNG |
Advance
K1S1616B5M
TIMING WAVEFORM OF POWER UP(1)
Read Operation Twice
200µs
UtRAM
≈
V
CC(Min)
V
CC
≈
ZZ
≈
CS
(POWER UP(1))
1. After V
CC
reaches V
CC
(Min.) following power application, wait 200µs with CS high and then toggle CS low and commit Read Operation
at least twice. Then you get into the normal operation.
2. Read operation should be executed by toggling CS pin low.
3. The read operation must satisfy the specified t
RC
.
4. ZZ pin should be kept high during whole power up sequence.
TIMING WAVEFORM OF POWER UP(2)
(No Dummy Cycle)
200µs
300µs
≈
≈
V
CC(Min)
V
CC
≈
≈
ZZ
≈
≈
CS
(POWER UP(2))
1. After V
CC
reaches V
CC
(Min.) following power application, wait 200µs and wait another 300µs with CS high if you don’t want to commit
dummy read cycle. After total 500µs wait, toggle CS low, then you get into the normal mode.
2. ZZ pin should be kept high during whole power up sequence.
-9-
Revision 0.0
May 2002
