K1S3216B9E-FI70T
| Model | K1S3216B9E-FI70T |
| Description | DRAM |
| PDF file | Total 17 pages (File size: 417K) |
| Chip Manufacturer | SAMSUNG |
K1S3216B9E
Table of Contents
Preliminary
UtRAM
PIN DESCRIPTIONS........................................................................................................................................1
FUNCTIONAL DESCRIPTION .........................................................................................................................2
TIMING REQUIREMENTS ...............................................................................................................................4
READ Cycle Timing Requirements............................................................................................................. 4
WRITE Cycle Timing Requirements ........................................................................................................... 4
TIMING DIAGRAMS.........................................................................................................................................5
READ (CS controlled)................................................................................................................................. 5
READ (OE controlled)................................................................................................................................. 6
READ Followed by WRITE (CS Controlled) ............................................................................................... 7
READ Followed by WRITE (OE, WE Controlled) ....................................................................................... 8
WRITE (CS Controlled) .............................................................................................................................. 10
WRITE (WE, UB/LB Controlled) ................................................................................................................ 11
WRITE Followed by READ (CS Controlled) .............................................................................................. 12
WRITE Followed by READ (OE, WE Controlled) ...................................................................................... 13
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Revision 0.0
December 2006
