K1S3216B9E-FI70T
| Model | K1S3216B9E-FI70T |
| Description | DRAM |
| PDF file | Total 17 pages (File size: 417K) |
| Chip Manufacturer | SAMSUNG |
K1S3216B9E
Preliminary
UtRAM
2M x 16 bit Multiplexed Asynchronous Uni-Transistor Random Access Memory
GENERAL DESCRIPTION
The K1S3216B9E is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device sup-
ports Industrial temperature range. The device supports internal TCSR(Temperature Compensated Self Refresh) for the standby
power saving at room temperature range.
FEATURES & FUNCTION BLOCK DIAGRAM
• Process technology: CMOS
• Organization: 2M x 16 bit
• Power supply voltage: 1.7V~1.95V
• Three state outputs
• Supports power saving modes
- Internal TCSR (Temperature Compensated Self Refresh)
Pre-charge circuit
V
CC
V
CCQ
V
SS
V
SSQ
Row
Addresses
Row
select
Memory
Array
A16~A20
PIN DESCRIPTIONS
Name
CS
OE
WE
ADV
A/DQ0~A/DQ15
A16~A20
Vcc/V
CCQ
Vss/Vss
Q
UB
LB
DNU
Function
Chip Select Inputs
Output Enable Input
Write Enable Input
Address Valid
Address and Data Inputs/Outputs
Address Inputs
Power Supply(core / I/O)
Ground
Upper Byte(I/O8~15)
Lower Byte(I/O0~7)
Do Not Use
ADV
CS
OE
WE
UB
LB
A/DQ
0
~A/DQ
7
Data
cont
Data
cont
Data
cont
I/O Circuit
Column Select
A/DQ
8
~A/DQ
15
Column Address
Control Logic
PRODUCT FAMILY
Product Family
K1S3216B9E-I
Operating Temp.
Industrial(-40~85°C)
Vcc / Vccq
1.7V~1.95V
Speed
(tAA)
70ns
Current Consumption
Standby
Operating
(I
SB1
, Max.)
(I
CC2
, Max.)
TBD < 85°C
TBD < 40°C
TBD
-1-
Revision 0.0
December 2006
