K1S3216B9E-FI70T
| Model | K1S3216B9E-FI70T |
| Description | DRAM |
| PDF file | Total 17 pages (File size: 417K) |
| Chip Manufacturer | SAMSUNG |
K1S3216B9E
POWER UP SEQUENCE
Preliminary
UtRAM
During the Power Up mode, the standby current can not be guaranteed. To get the stable standby current level, at least one cycle
of active operation should be implemented regardless of wait time duration. To get the appropriate device operation, be sure to
keep the following power up sequence.
1. Apply power.
2. Maintain stable power(Vcc min.=1.7V) for a minimum 150µs with CS=high.
TIMING WAVEFORM OF POWER UP
Min. 150µs
V
CC
V
CC(Min)
≈
≈
CS
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
L
L
L
L
L
OE
X
1)
H
H
L
L
L
H
H
H
WE
X
1)
H
H
H
H
H
L
L
L
LB
X
1)
X
1)
X
1)
L
H
L
L
H
L
UB
X
1)
X
1)
X
1)
H
L
L
H
L
L
H
H
H
H
H
H
ADV
X
1)
H
A/DQ0~15
High-Z
High-Z
Add. Input
Dout
Dout
Dout
Din
Din
Din
A16 ~ A21
X
1)
X
1)
Add. Input
X
1)
X
1)
X
1)
X
1)
X
1)
X
1)
Mode
Deselected
Output Disabled
Address Input
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1) X means don′t care. (Must be V
IL
or V
IH
)
-2-
Revision 0.0
December 2006
