TC1303C-1A1EMF
| Model | TC1303C-1A1EMF |
| Description | 0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, 3 X 3 MM, 0.9 MM HEIGHT, PLASTIC, DFN-10 |
| PDF file | Total 38 pages (File size: 756K) |
| Chip Manufacturer | MICROCHIP |
TC1303A/TC1303B/TC1303C/TC1304
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
V
IN
- A
GND
.......................................................................6.0V
All Other I/O ...............................(A
GND
- 0.3V) to (V
IN
+ 0.3V)
L
X
to P
GND
...............................................-0.3V to (V
IN
+ 0.3V)
P
GND
to A
GND
.................................................. -0.3V to +0.3V
Output Short Circuit Current ................................ Continuous
Power Dissipation (Note
7)
.......................... Internally Limited
Storage temperature .....................................-65°C to +150°C
Ambient Temp. with Power Applied ................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM)
.......................................
3 kV
DC CHARACTERISTICS
Electrical Characteristics:
V
IN1
=V
IN2
= SHDN1,2 = 3.6V, C
OUT1
= C
IN
= 4.7 µF, C
OUT2
= 1 µF, L = 4.7 µH, V
OUT1
(ADJ) = 1.8V,
I
OUT1
= 100 mA, I
OUT2
= 0.1 mA T
A
= +25°C.
Boldface
specifications apply over the T
A
range of
-40°C to +85°C.
Parameters
Input/Output Characteristics
Input Voltage
Maximum Output Current
Maximum Output Current
Shutdown Current
Combined V
IN1
and V
IN2
Current
TC1303A,B
Operating I
Q
TC1303C, TC1304
Operating I
Q
Synchronous Buck I
Q
LDO I
Q
SHDN1,SHDN2, SHDN (TC1304)
Logic Input Voltage Low
SHDN1,SHDN2, SHDN (TC1304)
Logic Input Voltage High
SHDN1,SHDN2, SHDN (TC1304)
Input Leakage Current
Thermal Shutdown
Thermal Shutdown Hysteresis
Undervoltage Lockout
(V
OUT1
and V
OUT2
)
Undervoltage Lockout Hysteresis
Note 1:
2:
3:
4:
5:
6:
V
IL
V
IH
I
IN
V
IN
I
OUT1_MAX
I
OUT2_MAX
I
IN_SHDN
I
Q
I
Q
2.7
500
300
—
—
—
—
—
45
-1.0
—
—
—
0.05
65.0
70.1
38
46
—
—
±0.01
5.5
—
—
1
110
110
—
—
15
—
1.0
V
mA
mA
µA
µA
µA
µA
%V
IN
%V
IN
µA
SHDN1 = SHDN2 = GND
SHDN1 = SHDN2 = V
IN2
I
OUT1
= 0 mA, I
OUT2
= 0 mA
SHDN1 = V
IN
, SHDN2 = GND
SHDN1 = GND, SHDN2 = V
IN2
V
IN1
=V
IN2
= 2.7V to 5.5V
V
IN1
=V
IN2
= 2.7V to 5.5V
V
IN1
=V
IN2
= 2.7V to 5.5V
SHDNX = GND
SHDNY = V
IN
V
IN1
Falling
Sym
Min
Typ
Max
Units
Conditions
Shutdown/UVLO/Thermal Shutdown Characteristics
T
SHD
T
SHD-HYS
UVLO
UVLO
-
HYS
—
—
2.4
—
165
10
2.55
200
—
—
2.7
—
°C
°C
V
mV
7:
8:
The Minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
RX
+ V
DROPOUT,
V
RX
= V
R1
or V
R2
.
V
RX
is the regulator output voltage setting.
TCV
OUT2
= ((V
OUT2max
– V
OUT2min
) * 10
6
)/(V
OUT2
* D
T
).
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
The integrated MOSFET switches have an integral diode from the L
X
pin to V
IN
, and from L
X
to P
GND
. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
V
IN1
and V
IN2
are supplied by the same input source.
©
2008 Microchip Technology Inc.
DS21949C-page 7
