K1B6416B6C
| Model | K1B6416B6C |
| Description | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| PDF file | Total 46 pages (File size: 769K) |
| Chip Manufacturer | SAMSUNG |
K1B6416B6C
ASYNCHRONOUS READ TIMING WAVEFORM
Fig.15 TIMING WAVEFORM OF ASYNCHRONOUS READ CYCLE
(MRS=V
IH,
WE=V
IH
, WAIT=High-Z)
t
RC
Address
UtRAM
t
CSHP(A)
CS
t
AA
t
CO
t
OH
t
CHZ
t
BA
UB, LB
t
BHZ
t
OE
OE
t
OLZ
t
BLZ
Data out
High-Z
t
OHZ
Data Valid
t
LZ
(ASYNCHRONOUS READ CYCLE)
1.
t
CHZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition,
t
CHZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
3. In asynchronous read cycle, Clock, ADV and WAIT signals are ignored.
Table 19. ASYNCHRONOUS READ AC CHARACTERISTICS
Symbol
Min
t
RC
t
AA
t
CO
t
BA
t
OE
t
OH
t
CSHP(A)
70
-
-
-
-
3
10
Speed
Max
-
70
70
35
35
-
-
ns
ns
ns
ns
ns
ns
ns
t
OLZ
t
BLZ
t
LZ
t
CHZ
t
BHZ
t
OHZ
Units
Symbol
Min
5
5
10
0
0
0
Speed
Max
-
-
-
12
12
12
ns
ns
ns
ns
ns
ns
Units
- 21 -
Revision 1.0
January 2005
