K1C6416B8D-FI70T
| Model | K1C6416B8D-FI70T |
| Description | Memory IC, 4MX16, CMOS, PBGA54 |
| PDF file | Total 47 pages (File size: 1M) |
| Chip Manufacturer | SAMSUNG |
K1C6416B8D
BUS OPERATING MODES
UtRAM2
The bus interface supports asynchronous and burst mode read and write transfers. The specific interface supported is defined by
the value loaded into the BCR.
Asynchronous Mode (default mode)
Asynchronous read operation
Asynchronous read operation starts when CS, OE and UB or LB are asserted. ADV can be taken HIGH to capture the address.
First data will be driven out of the A/DQ bus after random access time(tAA). WE should be de-asserted during read operation. The
CLK input must be held static LOW during read operation. WAIT will be driven while the device is enabled and its state should be
ignored.
Asynchronous write operation
Asynchronous write operation starts when CS, WE and UB or LB are asserted. The data to be written is latched on the rising edge
of CS, WE, or LB/UB (whichever occurs first). OE is High during write operation. WE LOW time must be limited to tCSM. The CLK
input must be held static LOW during write operation. WAIT signal is Hi-Z.
READ Operation
(WE = HIGH).
CS
WRITE Operation(OE
= HIGH)
CS
A[21:16]
Address
A[21:16]
Address
ADV
ADV
< tCSM
OE
WE
LB/UB
High-Z
LB/UB
A/DQ[15:0]
Address
DATA
A/DQ[15:0]
Address
DATA
Don’t Care
Undefined
Functional Description (Asynch. mode)
Asynchfonous Mode
BCR[15] = 1
Read
Write
Standby
No operation
Configuration register
write
Configuration register
read
DPD
Power
Active
Active
Standby
Idle
Active
Active
Deep Power-
down
CLK
L
L
L
L
L
L
L
X
H
X
L
ADV
CS
L
L
H
L
L
L
H
OE
L
H
X
X
H
L
X
WE
H
L
X
X
L
H
X
CRE
L
L
L
L
H
H
X
UB /
LB
L
L
X
X
X
L
X
WAIT
Low-Z
High-Z
High-Z
Low-Z
High-Z
Low-Z
High-Z
A/DQ[15:0]
Data out
Data in
High-Z
X
High-Z
Config.
Reg.out
High-Z
Notes
1
1
2
1
1. The device will consume active power in this mode whenever addresses are changed.
2. When the device is in standby mode, address inputs and data inputs/outputs are internally isolated from any external influence.
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Revision 3.0
Sep 2007
