K1C6416B8D-FI70T
| Model | K1C6416B8D-FI70T |
| Description | Memory IC, 4MX16, CMOS, PBGA54 |
| PDF file | Total 47 pages (File size: 1M) |
| Chip Manufacturer | SAMSUNG |
K1C6416B8D
4-Word Burst READ Operation—Variable Latency
(CRE=V
IL
)
t
CLK
CLK
V
IH
V
IL
t
SP
ADV
V
IH
V
IL
t
SP
A[21:16]
V
IH
V
IL
V
IH
V
IL
t
CSP
CS
V
IH
V
IL
V
IH
V
IL
t
SP
WE
V
IH
V
IL
V
OH
V
OL
t
SP
A/DQ[15:0]
V
IH
V
IL
t
HD
V
OH
Valid Address
UtRAM2
t
KHKL
t
KP
t
KP
t
HD
t
HD
Valid Address
t
SP
t
AVH
t
AHCR
t
ABA
t
CSM
t
ADVO
t
BOE
t
HD
LB/UB
t
HD
t
CBPH
t
HZ
OE
t
OHZ
t
HD
t
KHTL
t
CSW
High-Z
WAIT
t
KOH
t
ACLK
V
OL
Valid
Output
Valid
Output
Valid
Output
Valid
Output
High-Z
READ Burst Identified
(WE = HIGH)
Don’t Care
Undefined
1. Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.
2. Don’t care must be in V
IL
or V
IH
.
- 26 -
Revision 3.0
Sep 2007
