K1C6416B8D-FI70T
| Model | K1C6416B8D-FI70T |
| Description | Memory IC, 4MX16, CMOS, PBGA54 |
| PDF file | Total 47 pages (File size: 1M) |
| Chip Manufacturer | SAMSUNG |
K1C6416B8D
Asynchronous WRITE Followed by Asynchronous READ
(CRE=V
IL
)
A[21:16]
V
IH
V
IL
UtRAM2
Valid Address
t
AVS
t
VS
t
WR
t
VP
t
BW
Valid Address
t
AVS
t
AADV
ADV
V
IH
V
IL
LB/UB
V
IH
V
IL
t
CVP
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
t
CSW
High-Z
t
BA
t
HZ
t
CW
t
CPH
t
CO
t
BHZ
CS
Note 1
t
ADVOE
t
OLZ
t
OHZ
OE
t
ADVWE
t
WP
t
OE
WE
t
CSW
WAIT
V
OH
V
OL
t
AVS
A/DQ[15:0]
V
IH
IN/OUT
V
IL
t
AW
t
AVH
t
AA
t
DS
t
DH
t
AVS
Valid Address
Valid Input
Valid Address
V
OH
V
OL
Valid Output
Don’t Care
Undefined
1. CS can stay LOW when transitioning between asynchronous operations. If CS goes HIGH, it must remain HIGH for at least tCPH to schedule the
appropriate internal refresh operation.
2. Don’t care must be in V
IL
or V
IH
.
- 41 -
Revision 3.0
Sep 2007
