K1C6416B8D-FI70T
| Model | K1C6416B8D-FI70T |
| Description | Memory IC, 4MX16, CMOS, PBGA54 |
| PDF file | Total 47 pages (File size: 1M) |
| Chip Manufacturer | SAMSUNG |
K1C6416B8D
Single-Access Burst READ Operation—Variable Latency
(CRE=V
IL
)
t
CLK
V
IH
CLK
ADV
V
IL
V
IH
V
IL
V
IH
A[21:16]
V
IL
V
IH
V
IL
t
ADVO
OE
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
t
CSW
High-Z
UtRAM2
t
SP
t
HD
t
SP
t
HD
Valid Address
t
CSP
t
AVH
t
AHCR
t
BOE
t
OHZ
t
HD
t
HZ
CS
t
SP
t
HD
t
OLZ
WE
t
SP
t
KHTL
t
HD
LB/UB
WAIT
High-Z
t
SP
t
HD
V
OH
V
OL
t
ACLK
t
KOH
Valid
Output
High-Z
A/DQ[15:0]
Valid Address
READ Burst Identified
(WE = HIGH)
Don’t Care
Undefined
1. Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.
2. Don’t care must be in V
IL
or V
IH
.
- 25 -
Revision 3.0
Sep 2007
