K1C6416B8D-FI70T
| Model | K1C6416B8D-FI70T |
| Description | Memory IC, 4MX16, CMOS, PBGA54 |
| PDF file | Total 47 pages (File size: 1M) |
| Chip Manufacturer | SAMSUNG |
K1C6416B8D
Burst WRITE Operation—Fixed Latency Mode
(CRE=V
IL
)
t
CLK
CLK
V
IH
V
IL
V
IH
V
IL
t
SP
t
HD
t
AHCR
t
AVH
A[21:16]
V
IH
V
IL
Valid Address
UtRAM2
Unit: millimeters
t
KP
t
KP
t
KHKL
t
KADV
ADV
t
SP
t
HD
LB/UB
V
IH
V
IL
t
CSM
CS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
t
CSW
High-Z
NOTE 2
t
CSP
t
HD
t
CBPH
OE
t
SP
t
HD
WE
t
KHTL
t
HZ
High-Z
WAIT
t
SP
t
HD
t
SP
t
HD
A/DQ[15:0]
Valid Address
D[1]
D[2]
D[3]
D[4]
WRITE Burst Identified
(WE = LOW)
Don’t Care
1. Non-default BCR settings for burst WRITE operation in fixed latency mode: Fixed latency; latency code two (three clocks); WAIT active LOW;
WAIT asserted during delay; burst length four; burst wrap enabled.
2. WAIT asserts for LC cycles for both fixed and variable latency. LC = Latency Code (BCR[13:11]).
3. Don’t care must be in V
IL
or V
IH
.
- 36 -
Revision 3.0
Sep 2007
