K1C6416B2D-BI70
| Model | K1C6416B2D-BI70 |
| Description | Memory IC, 4MX16, CMOS, PBGA54 |
| PDF file | Total 50 pages (File size: 1M) |
| Chip Manufacturer | SAMSUNG |
K1C6416B2D
Asynchronous READ
(CRE=V
IL,
WE=V
IH
)
t
RC
Address
UtRAM2
ADV
t
AA
t
CO
Valid Address
t
AVS
t
AVH
CS
t
OH
t
HZ
t
BA
UB/, LB
t
OE
OE
t
BHZ
t
OLZ
t
BLZ
DQ[15:0]
High-Z
t
OHZ
Valid output
t
HZ
High-Z
Don’t Care
Undefined
t
LZ
t
CSW
WAIT
High-Z
1. Don’t care must be in V
IL
or V
IH
.
2. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
3. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device interconnection.
4. t
OE
(max) is met only when OE becomes enabled after t
AA
(max).
5. If invalid address signals shorter than min. t
RC
are continuously repeated for over 2.5us, the device needs a normal read timing(t
RC
) or needs to
sustain standby state for min. t
RC
at least once in every 2.5us.
- 20 -
Revision 3.0
Sep 2007
