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K1C6416B2D-BI70

K1C6416B2D-BI70

Model	K1C6416B2D-BI70
Description	Memory IC, 4MX16, CMOS, PBGA54
PDF file	Total 50 pages (File size: 1M)
Chip Manufacturer	SAMSUNG

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K1C6416B2D

UtRAM2

Burst WRITE Operation—Fixed Latency Mode ..........................................................................................35

4-Word Burst WRITE Operation— Row Boundary Crossing ......................................................................36

Burst WRITE Followed by Burst READ.......................................................................................................37

Burst READ Interrupted by Burst READ or WRITE ....................................................................................38

Burst WRITE Interrupted by Burst WRITE or READ—Variable Latency Mode ..........................................39

Burst WRITE Interrupted by Burst WRITE or READ—Fixed Latency Mode...............................................40

Asynchronous WRITE Followed by Burst READ ........................................................................................41

Asynchronous WRITE (ADV LOW) Followed By Burst READ....................................................................42

Burst READ Followed by Asynchronous WRITE (WE-Controlled) .............................................................43

Burst READ Followed by Asynchronous WRITE Using ADV......................................................................44

Asynchronous WRITE Followed by Asynchronous READ—ADV LOW......................................................45

Asynchronous WRITE Followed by Asynchronous READ..........................................................................46

PACKAGE DIMENSION .................................................................................................................................. 47

54 BALL FINE PITCH BGA(0.75mm ball pitch) ..........................................................................................47

-2-

Revision 3.0

Sep 2007

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