K1C6416B2D-BI70
| Model | K1C6416B2D-BI70 |
| Description | Memory IC, 4MX16, CMOS, PBGA54 |
| PDF file | Total 50 pages (File size: 1M) |
| Chip Manufacturer | SAMSUNG |
K1C6416B2D
GENERAL DESCRIPTION
UtRAM2
SAMSUNG’s UtRAM products are designed to meet the request from the customers who want to cope with the fast growing
mobile applications that need high-speed random access memory. UtRAM is the solution for the mobile market with its low cost,
high density and high performance feature. K1C6416B2D is fabricated by SAMSUNG′s advanced CMOS technology using one
transistor memory cell. The device supports the traditional SRAM like asynchronous operation (asynchronous page read and
asynchronous write), the NOR flash like synchronous operation (synchronous burst read and asynchronous write) and the fully
synchronous operation (synchronous burst read and synchronous burst write). These operation modes are defined through the
Confifuration Register Setting. It supports the special features for the standby power saving. Those are the PAR(Partial Array
Refresh) mode, DPD(Deep Power Down) mode and internal TCSR(Temperature Compensated Self Refresh). It also supports
variable and fixed latency, driver strength settings, Burst sequence (wrap or No-wrap) options and a device ID register (DIDR).
FEATURES
• Process technology: CMOS
• Organization: 4M x 16 bit
• Power supply voltage: 1.7V~1.95V
• Three state outputs
• Supports Configuration Register Set
- CRE pin set up
- Software set up
• Supports power saving modes
- PAR (Partial Array Refresh)
- DPD (Deep Power Down)
- Internal TCSR (Temperature Compensated Self Refresh)
• Supports driver strength optimization
• Support 2 operation modes
- Asynchronous mode (4-Page)
- Synchronous mode
• Random access time:70ns
• Page access time:20ns
• Synchronous burst operation
- Max. clock frequency : 104MHz
- Fixed and Variable read latency
- 4 / 8 / 16 / 32 and Continuous burst
- Wrap / No-wrap
- Latency : 3(Variable) @ 104MHz
3(Variable) @ 80MHz
2(Variable) @ 66MHz
- Burst stop
- Burst read suspend
- Burst write data masking
PRODUCT FAMILY
Product Family
K1C6416B2D-I
Operating Mode
Asynch. Mode
Synch. Mode
Operating Temp.
Industrial(-40~85°C)
Vcc / Vccq
1.7~1.95V
CLK Freq.
(Max.)
104MHz
Current Consumption
Standby
Operating
(I
SB1
, Max.)
(I
CC2P
, Max.)
180uA < 85°C
120uA < 40°C
40mA
-1-
Revision 3.0
Sep 2007
