U1AFS600-2FG256YI
| Model | U1AFS600-2FG256YI |
| Description | Field Programmable Gate Array, |
| PDF file | Total 334 pages (File size: 18M) |
| Chip Manufacturer | MICROSEMI |
Device Architecture
1.5 V Voltage Regulator
The 1.5 V voltage regulator uses an external pass transistor to generate 1.5 V from a 3.3 V supply. The
base of the pass transistor is tied to PTBASE, the collector is tied to 3.3 V, and an emitter is tied to
PTBASE and the 1.5 V supplies of the Fusion device.
shows the hook-up of
the 1.5 V voltage regulator to an external pass transistor.
Microsemi recommends using a PN2222A or 2N2222A transistor. The gain of such a transistor is
approximately 25, with a maximum base current of 20 mA. The maximum current that can be supported
is 0.5 A. Transistors with different gain can also be used for different current requirements.
Table 2-18 •
Electrical Characteristics
VCC33A = 3.3 V
Symbol
VOUT
ICC33A
Parameter
Output Voltage
Operation Current
Condition
Tj = 25ºC
Tj = 25ºC
ILOAD = 1 mA
ILOAD = 100 mA
ILOAD = 0.5 A
ΔVOUT
ΔVOUT
Load Regulation
Line Regulation
Tj = 25ºC
Tj = 25ºC
ILOAD = 1 mA to 0.5 A
VCC33A = 2.97 V to 3.63 V
ILOAD = 1 mA
VCC33A = 2.97 V to 3.63 V
ILOAD = 100 mA
VCC33A = 2.97 V to 3.63 V
ILOAD = 500 mA
Dropout Voltage*
Tj = 25ºC
ILOAD = 1 mA
ILOAD = 100 mA
ILOAD = 0.5 A
IPTBAS
E
PTBase Current
Tj = 25ºC
ILOAD = 1 mA
ILOAD = 100 mA
ILOAD = 0.5 A
Note:
*Data collected with 2N2222A.
12.1
10.6
0.63
0.84
1.35
48
736
12
mV/V
mV/V
V
V
V
µA
µA
mA
10.6
mV/V
Min
1.425
Typical
1.5
11
11
30
90
Max
1.575
Units
V
mA
mA
mA
mV
20
2- 40
R e visio n 3
